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Photoluminescence and lattice location of Eu and Pr implanted GaN samples

  • Published:2001-12 Issue: Volume:308-310 Page:22-25
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Monteiro T.,Boemare C.,Soares M.J.,Sá Ferreira R.A.,Carlos L.D.,Lorenz K.,Vianden R.,Alves E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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1. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-02

2. Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters;Applied Materials Today;2021-03

3. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-09

4. Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb;Journal of Luminescence;2019-06

5. Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride;Japanese Journal of Applied Physics;2019-04-25
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