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Growth and characterization of codoping of ZnSe:Cl with Li grown by molecular beam epitaxy on GaAs

  • Published:2001-01 Issue: Volume:302-303 Page:166-171
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Yoneta Minoru,Uechi Hideo,Nanami Kouta,Ohishi Masakazu,Saito Hiroshi,Yoshino Kenji,Ohmori Kenzo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al and N co-doped ZnTe Layers Grown by MBE;Journal of Crystal Growth;2007-04

2. Growth and optical property characterizations of ZnTe:(Al,N) layers using two co-doping techniques;physica status solidi (c);2006-03

3. Doping Aspects of Zn-Based Wide-Band-Gap Semiconductors;Springer Handbook of Electronic and Photonic Materials;2006

4. Role of Ga for Co-doping of Ga with N in ZnO Films;Japanese Journal of Applied Physics;2003-09-15

5. Influence of Codoping with Ga on the Electrical and Optical Properties of N-Doped ZnO Films;Journal of The Electrochemical Society;2003
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