Growth and optical property characterizations of ZnTe:(Al,N) layers using two co-doping techniques-Reference-Cited by-同舟云学术

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Growth and optical property characterizations of ZnTe:(Al,N) layers using two co-doping techniques

Published:2006-03 Issue:4 Volume:3 Page:789-792
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Ichiba A.,Ueno J.,Ogura K.,Katsuta S.,Kobayashi M.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference12 articles.

1. Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy

2. Growth of Low-Resistivity n-Type ZnTe by Metalorganic Vapor Phase Epitaxy

3. n- And p-type modulation doping of Te related semimagnetic II–VI heterostructures

4. Electronic structures of p-type GaN codoped with Be or Mg as the acceptors and Si or O as the donor codopants

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1. Influence of the lattice mismatch strain on the surface morphology of ZnMgTe/ZnTe/ZnMgTe electro-optical waveguide structure;physica status solidi (b);2016-03-29

2. Growth of ZnTe epilayers onr- andn-plane sapphire substrates;Japanese Journal of Applied Physics;2015-06-05

3. (211) oriented ZnTe growth on m-plane sapphire by MBE;physica status solidi (c);2013-10-07

4. Injection and Optical Spectroscopy of Localized States in II-VI Semiconductor Films;Advanced Aspects of Spectroscopy;2012-08-29

5. Molecular Beam Epitaxy Growth of ZnTe Epilayers on $c$-Plane Sapphire;Applied Physics Express;2012-08-28

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