Peculiarities of optical and low-temperature transport properties of multi-layer InAs/GaAs structures with quantum dots-Reference-Cited by-同舟云学术

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Peculiarities of optical and low-temperature transport properties of multi-layer InAs/GaAs structures with quantum dots

Published:1999-05 Issue:3 Volume:266 Page:185-191
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Kulbachinskii V.A,Kytin V.G,Lunin R.A,Golikov A.V,Malkina I.G,Zvonkov B.N,Safyanov Yu.N

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

3. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

4. MBE growth and properties of monolayer and submonolayer InAs layer embedded in GaAs/AlAs quantum wells

5. Transport properties of two‐dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer;Physica E: Low-dimensional Systems and Nanostructures;2007-07

2. Persistent IR photoconductivity in InAs/GaAs structures with QD layers;Semiconductors;2006-02

3. Magnetic-field-induced quantum Hall effect – Hall insulator transition and hopping conductivity in InAs/GaAs quantum dot layers;Physica E: Low-dimensional Systems and Nanostructures;2003-05

4. Quantum Hall effect-insulator transition in the InAs/GaAs system with quantum dots;Physics of the Solid State;2003-04

5. Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers;SPIE Proceedings;2002-06-05

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