Persistent IR photoconductivity in InAs/GaAs structures with QD layers-Reference-Cited by-同舟云学术

Persistent IR photoconductivity in InAs/GaAs structures with QD layers

Published:2006-02 Issue:2 Volume:40 Page:210-216
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kul’bachinskiĭ V. A.,Rogozin V. A.,Kytin V. G.,Lunin R. A.,Zvonkov B. N.,Dashevsky Z. M.,Casian V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606020187.pdf

Reference18 articles.

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2. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 385 (1998) [Semiconductors 32, 343 (1998)].

3. V. M. Ustinov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 963 (2004 [Semiconductors 38, 923 (2004)].

4. M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 763 (2004) [Semiconductors 38, 732 (2004)].

5. I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1270 (2003) [Semiconductors 37, 1239 (2003)].

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