2D bipolar Monte Carlo calculation of current fluctuations at the onset of quasisaturation of a Si BJT

Author:

Martín Martínez M

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs;Design, Simulation and Construction of Field Effect Transistors;2018-07-18

2. Sub-THz Imaging Using Non-Resonant HEMT Detectors;Sensors;2018-02-10

3. Bibliography;The Wigner Monte Carlo Method for Nanoelectronic Devices;2013-03-20

4. Analysis of RF noise performance of Si/SiGe pseudomorphic MOSFETs;2009 Spanish Conference on Electron Devices;2009-02

5. Noise in strained Si MOSFETs for low-power applications;Journal of Statistical Mechanics: Theory and Experiment;2009-01-07

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