Evidence on a bond-breaking relaxation in the bistable centers In and Ga in CdF2-Reference-Cited by-同舟云学术

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Evidence on a bond-breaking relaxation in the bistable centers In and Ga in CdF2

Published:1999-12 Issue: Volume:273-274 Page:915-918
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Nissilä J,Saarinen K,Hautojärvi P,Suchocki A,Langer J.M

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Deep donor levels (DXcenters) in III‐V semiconductors

2. Shallow versus deep In donors in CdF2 crystals

3. CdF2:In—A Critical Positive Test of the Toyozawa Model of Impurity Self-Trapping

4. J.M. Langer, in: Reviews of Solid State Science, Vol. 4, World Scientific, Singapore, 1990, p. 297.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12

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