Influence of oxygen co-doping on the thermal quenching property of Er-related emission in Al0.70Ga0.30As:Er
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Optical and crystalline properties of Yb implanted InP
2. Photoluminescence and Raman scattering studies of 2 MeV Yb+‐implanted InP as a function of etching depth
3. Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen
4. Er-related emission in nitrogen co-implanted AlXGa1−XAs:Er (X=0.15, 0.37, 0.70)
5. Influence of impurities (nitrogen, oxygen) on Er-related emission in gallium phosphide
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence and Raman characterization from Er-implanted In x Ga 1-x As bulk crystal;SPIE Proceedings;2008-02-07
2. Effects of Yb impurity on Er-related emission in Al0.70Ga0.30As:Er,Yb epitaxially grown on GaAs substrate;physica status solidi (a);2008-01
3. Decay dynamics of the green luminescence in Er3 -doped SiN alloys;Journal of Physics: Condensed Matter;2003-06-27
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