Quenching of persistent photoconductivity and decrease of electron concentration by high electric fields in GaAs delta-doped by Sn on vicinal substrate structures-Reference-Cited by-同舟云学术

Quenching of persistent photoconductivity and decrease of electron concentration by high electric fields in GaAs delta-doped by Sn on vicinal substrate structures

Published:1997-03 Issue:3-4 Volume:229 Page:262-267
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Kulbachinskii V.A.,Lunin R.A.,Bogdanov E.V.,Kytin V.G.,Senichkin A.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

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2. Deep donor levels (DXcenters) in III‐V semiconductors

3. Optical investigation of theDXcenters in GaAs under hydrostatic pressure

4. Physics of DX centers in GaAs alloys,1990

5. Decay kinetics of persistent photoconductivity in semiconductors

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4. Negative persistent photoconductivity in GaAs (δ-Sn) structures;Journal of Experimental and Theoretical Physics;1999-12

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