Semiconductor studies by radioactive probe atoms-Reference-Cited by-同舟云学术

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Semiconductor studies by radioactive probe atoms

Published:2003-02 Issue:1-4 Volume:326 Page:105-112
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Wichert Thomas

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. M. Stavola (Ed.), Identification of Defects in Semiconductors, Semiconductors and Semimetals, Vol. 51A/51B, Academic Press, London, 1998/1999.

2. Hyperfine Interaction of Defects in Semiconductors;Langouche,1992

3. Radioactive probe atoms in semiconductors

4. Exploring solid state physics properties with radioactive isotopes

5. Studies of semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Materials science and biophysics applications at the ISOLDE radioactive ion beam facility;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-12

2. Nuclear radioactive techniques applied to materials research;ract;2011-07-14

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