Auger recombination in strained Si Ge1−/Si superlattices
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Normal incidence infrared detector using intervalence‐subband transitions in Si1−xGex/Si quantum wells
2. Intersubband mid-infrared emission in optically pumped quantum wells
3. Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained‐layer infrared photodetector operating between 20 and 77 K
4. C.G. Van de Walle, R.M. Martin, Phys. Rev. B 34 (1986) 5621.
5. Photoluminescence and Raman scattering from GaN layers grown on GaAs and GaP substrates
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