Low power multilevel resistive switching in titanium oxide-based RRAM devices by interface engineering-Reference-Cited by-同舟云学术

Low power multilevel resistive switching in titanium oxide-based RRAM devices by interface engineering

Published:2021-12 Issue:4 Volume:6 Page:601-610
ISSN:2468-2179
Container-title:Journal of Science: Advanced Materials and Devices
language:en
Short-container-title:Journal of Science: Advanced Materials and Devices

Author:

Swathi S.P.^ORCID,Angappane S.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Elsevier BV

Subject

Materials Science (miscellaneous),Biomaterials,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Resistive switching materials for information processing;Wang;Nat. Rev. Mater.,2020

2. Physics for neuromorphic computing;Markovic;Nat. Rev. Phys.,2020

3. Resistive switching behavior, mechanism and synaptic characteristics in TiO2 nanosheets grown on Ti plate by hydrothermal method;Wang;J. Alloys Compd.,2021

4. Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems;Mahata;J. Alloys Compd.,2020

5. Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption;Zhao;Appl. Phys. Lett.,2021

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