Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems-Reference-Cited by-同舟云学术

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Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

Published:2020-06 Issue: Volume:826 Page:154434
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Mahata Chandreswar,Lee Changmin,An Youngseo,Kim Min-Hwi,Bang Suhyun,Kim Chae Soo,Ryu Ji-Ho,Kim Sungjun,Kim Hyoungsub,Park Byung-Gook

Funder

National Research Foundation of Korea

Korean government

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference71 articles.

1. Redox-Based resistive switching memories – nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009

2. Resistive switching phenomena: a review of statistical physics approaches;Lee;Appl. Phys. Rev.,2015

3. Resistive switching in transition metal oxides;Sawa;Mater. Today,2008

4. Nanoionics-based resistive switching memories;Waser;Nat. Mater.,2007

5. Memristive devices for computing;Yang;Nat. Nanotechnol.,2013

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