Effects of plasma conditions on the etch properties of AlGaN
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference7 articles.
1. Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
2. A study of GaN etch mechanisms using inductively coupled Cl2/Ar plasmas
3. Characteristics of inductively coupled Cl2/BCl3 plasmas during GaN etching
4. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
5. Native oxide removal during chlorine reactive ion etching of silicon in an rf diode reactor
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