Optical properties and chemical structure of ion implanted a-SiC : H
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference13 articles.
1. Kanicki J, editor. Amorphous and microcrystalline semiconductor devices. Boston-London: Artech House, 1991.
2. Crystalline-amorphous contrast formation in thermally crystallized SiC
3. The contribution of ion-beam techniques to the physics and technology of amorphous semiconductors
4. Development of a high-brightness gas field-ionization source
5. Optical contrast formation in a-Si1−C :H films by ion implantation
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