X-ray photoelectron study of high-energy He+implanted a-SiC:H thin films-Reference-Cited by-同舟云学术

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X-ray photoelectron study of high-energy He+implanted a-SiC:H thin films

Published:2010-11-01 Issue: Volume:253 Page:012052
ISSN:1742-6596
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Tsvetkova T,Sellin P,Dimova-Malinovska D,Angelov O,Krastev V,Stefanov P,Avramova I

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/253/i=1/a=012052/pdf

Reference22 articles.

1. Analytics of CVD Processes in the Deposition of SiC by Methyltrichlorosilane

2. Physics of Amorphous Silicon–Carbon Alloys

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of hybrid phosphamide containing polysilsesquioxane and its effect on flame retardancy and mechanical properties of polypropylene composites;Composites Part B: Engineering;2013-02

2. Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime;SPIE Proceedings;2011-11-23

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