Some effects of (NH4)2Sx treatment of n-GaAs surface on electrical characteristics of metal-SiO2–GaAs structures
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference22 articles.
1. Silicon nitride/(NH4)2Sx passivation of n-GaAs to unpin the Fermi level
2. Control of the GaAs/SiO2 interface through sulfur passivation and a photo-CVD process
3. The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures
4. Control of Fermi level pinning and recombination processes at GaAs surfaces by chemical and photochemical treatments
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