Investigation on the interface formation of ambient-pressure-dried SiO2 aerogel film deposited on GaAs
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference9 articles.
1. Handbook of low and high dielectric constant materials and their applications;Nalwa,1999
2. The Effect of Ar+Ion Bombardment on SiO2Aerogel Film
3. Silica aerogel films prepared at ambient pressure by using surface derivatization to induce reversible drying shrinkage
4. The characterization of etched GaAs surface with HCl or H3PO4 solutions
5. Pretreatment of GaAs (001) for sulfur passivation with (NH4)2Sx
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1. Synthesis of porous polyimide films with low dielectric constant and excellent mechanical properties by ambient pressure drying;Journal of Materials Science;2022-05
2. Effect of annealing temperature on properties of SiO2/Si3N4 optical films prepared by PECVD method;CAILIAO GONGCHENG;2020
3. Preparation of silica aerogel from rice hull ash by drying at atmospheric pressure;Materials Chemistry and Physics;2008-12
4. Fabrication of ultrathin (∼100 nm), low-index nanoporous silica films for photonic devices: Role of substrate adhesion on the film thickness;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
5. Application of SiO2 aerogel film for interlayer dielectric on GaAs with a barrier of Si3N4;Thin Solid Films;2004-01
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