Modeling and application of Czochralski silicon single crystal growth process using hybrid model of data-driven and mechanism-based methodologies-Reference-Cited by-同舟云学术

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Modeling and application of Czochralski silicon single crystal growth process using hybrid model of data-driven and mechanism-based methodologies

Published:2021-08 Issue: Volume:104 Page:74-85
ISSN:0959-1524
Container-title:Journal of Process Control
language:en
Short-container-title:Journal of Process Control

Author:

Ren Jun-Chao^ORCID,Liu Ding,Wan Yin

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Computer Science Applications,Modelling and Simulation,Control and Systems Engineering

Reference35 articles.

1. A review of growth process modeling and control of czochralski silicon single crystal;Liu;Control Theory Appl.,2017

2. Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone, Shaping and Crucible Techniques;Duffar,2010

3. Mathematical modelling and control system design of Czochralski and liquid encapsulated Czochralski processes: the basic low order mathematical model;Satunkin;J. Cryst. Growth,1995

4. Crystal temperature control in czochralski crystal growth process;Armaou;AIChE J.,2001

5. Optimal boundary control of a diffusion–convection-reaction PDE model with time-dependent spatial domain: Czochralski crystal growth process;Ng;Chem. Eng. Sci.,2012

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