Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes
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Elsevier
Reference13 articles.
1. 19th International Symposium on Chemical–Mechanical Planarization (CMP), Albany, NY;Grumbine,2014
2. Role of Poly(diallyldimethylammonium chloride) in selective polishing of polysilicon over silicon dioxide and silicon nitride films;Penta;Langmuir,2011
3. Charge density and pH effects on polycation adsorption on poly-Si, SiO2, and Si3N4 films and impact on removal during chemical mechanical polishing;Penta;ACS Appl. Mater. Interfaces,2011
4. Role of polycation adsorption in poly-Si, SiO2 and Si3N4 removal during chemical mechanical polishing: effect of polishing pad surface chemistry, colloids and surfaces A;Penta;Physicochem. Eng. Aspects,2011
5. Novel phosphate-functionalized silica-based dispersions for selectively polishing silicon nitride over silicon dioxide and polysilicon films
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1. Abrasive-free chemical-mechanical planarization (CMP) of gold for thin film nano-patterning;Nanoscale;2024
2. Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review;International Journal of Precision Engineering and Manufacturing-Green Technology;2021-11-26
3. Roles and mechanistic analysis of adenine as a green inhibitor in chemical mechanical polishing;Journal of Applied Electrochemistry;2021-06-18
4. Investigation of abrasive-free slurry for polysilicon buffing chemical mechanical planarization;Materials Science in Semiconductor Processing;2021-06
5. Effect of Surfactant Based Abrasive Free Slurry on CMP Polishing Rate and Planarization of Semi-Polar (11‒22) GaN Surface;ECS Journal of Solid State Science and Technology;2019
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