Chapter 4 InP Crystal Growth, Substrate Preparation and Evaluation-Reference-Cited by-同舟云学术

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Chapter 4 InP Crystal Growth, Substrate Preparation and Evaluation

Published:1990 Issue: Volume: Page:93-174
ISSN:0080-8784
Container-title:Semiconductors and Semimetals
language:
Short-container-title:

Author:

Oda O.,Katagiri K.,Shinohara K.,Katsura S.,Takahashi Y.,Kainosho K.,Kohiro K.,Hirano R.

Publisher

Elsevier

Reference130 articles.

1. High Purity Polycrystalline InP;Adamski;J. Crystal Growth,1982

2. Synthesis of Indium Phosphide;Adamski;J. Crystal Growth,1983

3. Large Diameter InP Single Crystals (in Japanese);Akai,1985

4. Synthesis of Indium Phosphide in a Pressure Balanced System;Allred;J. Crystal Growth,1981

5. Indium Phosphide as Applied in Optoelectronic Communication Devices;Araki;JEE,1984

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InP/PtS2 heterojunctions: Z-scheme photocatalysts with enhanced light absorption for high solar-to-hydrogen conversion efficiency;International Journal of Hydrogen Energy;2024-09

2. Dynamics analysis of twin formation for InP and preparation of 6 inch InP single crystals;CrystEngComm;2024

3. On Incipient Plasticity of InP Crystal: A Molecular Dynamics Study;Materials;2021-07-26

4. Evaluation of residual stress in InP and InAs (100) substrates obtained from single crystals grown by LEC and VGF methods;Materials Science in Semiconductor Processing;2021-01

5. Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal;Crystals;2019-12-07

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