Chapter 4 OMVPE Growth of AlGalnP for High-Efficiency Visible Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Chapter 4 OMVPE Growth of AlGalnP for High-Efficiency Visible Light-Emitting Diodes

Published:1997 Issue: Volume: Page:97-148
ISSN:0080-8784
Container-title:Semiconductors and Semimetals
language:
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Author:

Chen C.H.,Stockman S.A.,Peanasky M.J.,Kuo C.P.

Publisher

Elsevier

Reference118 articles.

1. Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis‐cyclopentadienyl magnesium

2. Alkyl exchange effects between triethylindium and trimethylgallium

3. Air Products (1995). “The Cutting Edge: Organometallics Update,” June issue

4. American Cyanamid (1988). Appl. No. 2

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1. InP colloidal quantum dots for visible and near-infrared photonics;Nature Reviews Materials;2023-10-12

2. Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy;Journal of Electronic Materials;2021-03-19

3. 2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy;Solar Energy Materials and Solar Cells;2021-01

4. Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography;Journal of Crystal Growth;2020-03

5. Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers;Journal of Electronic Materials;2020-02-10

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