Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis‐cyclopentadienyl magnesium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108982
Reference5 articles.
1. Anomalous silicon and tin doping behaviour in indium phosphide grown by chemical beam epitaxy
2. Zinc-doping of InP during chemical beam epitaxy using diethylzinc
3. A study of p-type dopants for InP grown by adduct MOVPE
4. Mg diffusion during metalorganic vapor phase epitaxy of InP
5. Gaseous dopant sources in MOMBE/CBE
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1. Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE;Journal of Materials Science: Materials in Electronics;2017-08-23
2. Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE;Journal of Nanoparticle Research;2017-01
3. Spectroscopic ellipsometry and electrical characterizations of InGaAs:Mg thin films lattice matched to InP;The European Physical Journal Plus;2016-06
4. Comprehensive study of Cp 2 Mg p-type doping of InP with MOVPE growth technique;Journal of Alloys and Compounds;2015-12
5. Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films;Journal of Materials Chemistry;2000
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