Chapter 5 Photoluminescence II: Gallium Arsenide-Reference-Cited by-同舟云学术

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Chapter 5 Photoluminescence II: Gallium Arsenide

Published:1972 Issue: Volume: Page:321-392
ISSN:0080-8784
Container-title:Semiconductors and Semimetals
language:
Short-container-title:

Author:

Williams E.W.,Bebb H.Barry

Publisher

Elsevier

Reference166 articles.

1. H. Barry Bebb and E. W. Williams, Chap. 4 of this volume.

2. Dislocations in GaAs17−xPx

3. Cathodoluminescence of n‐Type GaAs

4. B. D. Joyce and E. W. Williams, Int. Symp., 3rd, on GaAs and Related Compounds, Aachen, Germany 1970, p. 57. Photoluminescence half width versus carrier concentration for InP compared with GaAs.

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