Radiation-induced conductivity of doped silicon in response to photon, proton and neutron irradiation-Reference-Cited by-同舟云学术

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Radiation-induced conductivity of doped silicon in response to photon, proton and neutron irradiation

Published:2000-12 Issue: Volume:283-287 Page:907-911
ISSN:0022-3115
Container-title:Journal of Nuclear Materials
language:en
Short-container-title:Journal of Nuclear Materials

Author:

Kishimoto N.,Amekura H.,Plaksin O.A.,Stepanov V.A.

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics

Reference13 articles.

1. L.A. Hussain, D.C. Northrop, J. Phys. D (1975) 1104

2. Comparison of 14 MeV neutron-induced and 1 MeV electron-induced radiation damage in crystalline silicon

3. Radiation damage and minority carrier lifetime in crystalline silicon

4. Photoconductivity evolution due to carrier trapping by defects in 17 MeV‐proton irradiated silicon

5. Radiation-resistant photoconductivity of doped silicon under 17 MeV proton bombardment

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Millimeter wave photoresponse of low-dose radiation damaged silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-09

2. Millimeter wave probe data for irradiated silicon;2020 SoutheastCon;2020-03-28

3. Response of metal oxide thin film structures to radiation;Materials Science and Engineering: B;2006-08

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