Experimental and numerical studies on the power RF N-LDMOS transistor under cold and hot thermal shock tests based aging mechanism

Author:

Belaïd M.A.,Nahhas A.

Publisher

Elsevier BV

Subject

General Engineering

Reference25 articles.

1. RF performance reliability of power N-LDMOS under pulsed-RF ife test in radar application;Belaïd;IET Circuits, Devices Syst.,2020

2. High-performance temperature control system for resistance furnace annealing and crystal growth of semiconductor compounds;Surus;Res. Eng.,2022

3. Thermal Annealing Effects on the Physical Properties of GaAsBi/GaAs/GaAs:Si Structure;Alazmi,2023

4. Study the effect of temperature variation and intrinsic layer thickness on the linear response of a PIN photodetector;Res. Eng.,2022

5. An RF stress-based thermal shock test method for a CMOS power amplifier;Shaouaz;Electron. Dev. Soc.,2021

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