Author:
Yoon S.F,Kam A.H.T,Gay B.P,Zheng H.Q,Ng G.I
Reference16 articles.
1. Two-dimensional transient simulation of an idealized high electron mobility transistor;Widiger;IEEE Transactions on Electron Devices,1985
2. Scaling properties of high electron mobility transistors;Kizilyalli;IEEE Transactions on Electron Devices,1986
3. Scaling properties and short-channel effects in submicrometer algaas/gaas modfet’s: a Monte Carlo study;Kizilyalli;IEEE Transactions on Electron Devices,1993
4. Study of AlGaAs/InGaAs pseudomorphic HEMT using a two-dimensional device simulator;Yuan;Physica Status Solidus,1996
5. Y.C. Pao, K. Tran, M.F. Zybura, B. Ireton, Heterojunction device simulation for production phemt process control, GaAs MANTECH (1998), 119–121.
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