Three-dimensional scattering matrix simulation of resonant tunnelling via quasi-bound states in vertical quantum dots-Reference-Cited by-同舟云学术

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Three-dimensional scattering matrix simulation of resonant tunnelling via quasi-bound states in vertical quantum dots

Published:1999-10 Issue:10 Volume:30 Page:1007-1017
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Mizuta H.

Publisher

Elsevier BV

Subject

General Engineering

Reference27 articles.

1. Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure;Reed;Phys. Rev. Lett.,1988

2. Non-equilibrium quantum dots: transport;Reed;Nanotechnology,1990

3. Resonant tunneling through one- and zero-dimensional states constricted by AlxGa1−xAs/GaAs/AlxGa1−xAs heterojunctions and high-resistance regions induced by focused Ga ion-beam implantation;Tarucha;Phys. Rev.,1990

4. Resonant tunneling in submicron double-barrier heterostructures;Su;Appl. Phys. Lett.,1991

5. Gated resonant tunnelling devices;Dellow;Electronics Lett.,1991

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1. Calculation of electron transport in branched semiconductor nanostructures using quantum network model;Applied Physics A;2021-12-04

2. Theoretical suggestions of resonant tunneling diodes and laser field effects on their current-voltage characteristics;Superlattices and Microstructures;2019-09

3. Quantum effects in the transport properties of nanoelectronic three-terminal Y-junction devices;Physical Review B;2003-06-23

4. Characteristics of electron transport through vertical double-barrier quantum-dot structures: Effects of symmetric and asymmetric variations of the lateral confinement potentials;Physical Review B;2002-11-21

5. Scattering-matrix formalism of electron transport through three-terminal quantum structures: formulation and application to Y-junction devices;Journal of Physics: Condensed Matter;2002-11-20

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