Charge accumulation effects in InGaAs/GaAs [111]-oriented piezoelectric multiple quantum wells-Reference-Cited by-同舟云学术

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Charge accumulation effects in InGaAs/GaAs [111]-oriented piezoelectric multiple quantum wells

Published:1997-10 Issue:8-10 Volume:28 Page:767-775
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Sánchez-Rojas J.L.,Sacedón A.,Vlaltueña J.F.,Sanz-Hervás A.,Izpura I.,Calleja E.,Muñoz E.,Abril E.J.,Aguilar M.

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

1. Effect of an electric field on the luminescence of GaAs quantum wells;Mendez;Phys. Rev. B,1982

2. Electric-field dependence of linear optical properties in quantum well structures: waveguide electroabsorption and sum rules;Miller;IEEE J. Quantum Electron.,1986

3. Linear and non-linear optical properties of semiconductor quantum wells;Schmitt-Rink;Adv. Phys.,1989

4. Enhancement of quantum confined Stark effect in a graded gap quantum well;Nishi;Appl. Phys. Lett.,1987

5. Electroabsorption and electrorefraction in GaAs/AlGaAs waveguides containing asymmetric coupled quantum wells;Steijn;Appl. Phys. Lett.,1989

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advantages of using piezoelectric quantum structures for photovoltaics;Journal of Applied Physics;2003-01

2. Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent;Microelectronics Journal;1999-04

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