Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wells-Reference-Cited by-同舟云学术

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Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wells

Published:2003-05 Issue:5-8 Volume:34 Page:671-673
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Lee H.C.,Sun K.W.

Publisher

Elsevier BV

Subject

General Engineering

Reference7 articles.

1. Dynamical screening, collective excitation, and electron–phonon interaction in heterostructures and semiconductor quantum wells;Wendler;Phys. Status Solidi B,1987

2. Electron–optical phonon interaction in single and double heterostructures;Mori;Phys. Rev. B,1989

3. Resonance Raman scattering by confined LO and TO phonons in GaAs–AlAs superlattices;Sood;Phys. Rev. Lett.,1985

4. Interface vibrational modes in GaAs–AlAs superlattices;Sood;Phys. Rev. Lett.,1985

5. Raman and hot electron-neutral acceptor luminescence studies of electron–optical phonon interactions in GaAs/AlxGa1−xAs quantum wells;Sun;Solid State Commun.,2000

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1. Band structures of a slowly rotating dipolar Bose-Einstein condensate with a quantized vortex along a one-dimensional optical lattice;The European Physical Journal D;2010-04-26

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