Raman and hot electron–neutral acceptor luminescence studies of electron–optical phonon interactions in GaAs/AlxGa1−xAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. Resonance Raman Scattering by Confined LO and TO Phonons in GaAs-AlAs Superlattices
2. Interface vibrational Raman lines in GaAs/AlxGa1−xAs superlattices
3. Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model
4. Raman scattering due to interface optical phonons in GaAs/AlAs multiple quantum wells
5. Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs
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1. Electron–interface-phonon interaction strength in Pöschl–Teller quantum wells is enhanced considerably compared to rectangular ones;Vacuum;2024-02
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3. Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach;Semiconductor Science and Technology;2007-08-23
4. Phonon sidebands in photoluminescence of beryllium δ-doped GaAs/AlAs multiple quantum wells;SPIE Proceedings;2006-02-19
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