Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures

Author:

Zamora-Peredo L.,Guillen-Cervantes A.,Rivera-Alvarez Z.,López-López M.,Rodrı́guez-Vázquez A.G.,Méndez-Garcı́a V.H.

Publisher

Elsevier BV

Subject

General Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Review for Novel 2DEG Based on Diverse Oxide Substrates;Nano;2024-02-23

2. Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-03

3. MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures;Journal of Crystal Growth;2013-09

4. Optical characterization of AlxGa1−xAs/GaAs modulation-doped heterostructures grown under As2 and As4 fluxes;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

5. Photoreflectance investigations of HEMT structures grown by MBE;Journal of Crystal Growth;2005-05

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