Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition-Reference-Cited by-同舟云学术

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Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition

Published:2003-05 Issue:5-8 Volume:34 Page:363-370
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Ma T.P.

Publisher

Elsevier BV

Subject

General Engineering

Reference24 articles.

1. Making silicon nitride film a viable gate dielectric

2. Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content

3. Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures

4. Two-band conduction of amorphous silicon nitride

5. Hydrogen‐related memory traps in thin silicon nitride films

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial MgO as an alternative gate dielectric for SiC transistor applications;Applied Physics Letters;2008-06-09

2. Demonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3N4;Applied Physics Letters;2007-05-07

3. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors;Microelectronic Engineering;2006-10

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