An analytical 2D model for drain-induced barrier lowering in subquarter micrometer gate length InAlAs/InGaAs/InAlAs/InP LMHEMT
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference15 articles.
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3. High gain W-band InGaAS–InAlAs–InP HEMT's for low noise application;Streif;Proc. IEEE/Cornel Conf. Adv. Conc. High-speed Semicond. Device Circuits,1991
4. Carrier concentration dependent low field mobility model for InAlAs/InGaAs/InP lattice matched HEMT for microwave application;Jogi;Microwave Optical Technol. Lett.,2001
5. A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135GHz cut-off frequency;Jogi;Microelectron. J.,2001
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1. Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT;Superlattices and Microstructures;2008-07
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