A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135GHz cut-off frequency
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference17 articles.
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved Characterization and Accurate Modelling of Drain Current Derivatives of InP Based High Electron Mobility Transistors Devices;Journal of Nanoscience and Nanotechnology;2019-07-01
2. Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures;IEICE Electronics Express;2010
3. An analytical 2D model for drain-induced barrier lowering in subquarter micrometer gate length InAlAs/InGaAs/InAlAs/InP LMHEMT;Microelectronics Journal;2002-08
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