Compact DC model for submicron GaAs MESFETs including gate-source modulation effects-Reference-Cited by-同舟云学术

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Compact DC model for submicron GaAs MESFETs including gate-source modulation effects

Published:2001-03 Issue:3 Volume:32 Page:249-251
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

McNally P.J.,Daniels B.

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. An improved DC model for circuit analysis programs for submicron GaAs MESFETs;Ahmed;IEEE Trans. Electron. Devices,1997

2. A MESFET model for use in the design of GaAs integrated circuits;Curtice;IEEE Trans. Microwave Theory Tech.,1980

3. Compact Transistor Modelling for Circuit Design;de Graaff,1990

4. Solid State Electronic Devices;Streetman,2000

5. Microwave MESFETs and HEMTs;Golio,1991

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An extended-temperature I-V model for GaN HEMTs;Solid-State Electronics;2022-08

2. A nonlinear model to assess DC/AC performance reliability of submicron SiC MESFETs;Journal of Computational Electronics;2018-04-10

3. An improved model for current voltage characteristics of submicron SiC MESFETs;Solid-State Electronics;2016-07

4. Analytical modelling of the current ( I )–voltage ( V ) characteristics of sub‐micron gate‐length ion‐implanted GaAs MESFETs under dark and illuminated conditions;IET Circuits, Devices & Systems;2013-01

5. Modeling of GaN MESFETs at high temperature;2010 International Conference on Microelectronics;2010-12

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