Characterization and modeling of avalanche multiplication in HBTs
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference17 articles.
1. Class-A SiGe HBT power amplifiers at C-band frequencies;Erben;IEEE Microwave Guided Wave Lett.,1995
2. Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors;Flitcroft;IEEE Trans. Electr. Dev.,1998
3. Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's;Niu;IEEE Trans. Electr. Dev.,1999
4. Separating the influence of neutral base recombination and avalanche breakdown on base current reduction in SiGe HBT's;Hamel;IEEE Trans. Electr. Dev.,1997
5. Avalanche multiplication in InP/InGaAs double heterojunction bipolar transistors with composite collectors;Wang;IEEE Trans. Electr. Dev.,2000
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Extraction of VBIC model parameters for InGaAsSb DHBTs;Microelectronics Reliability;2010-03
2. The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits;IEEE Transactions on Electron Devices;2007-07
3. Reliability issues associated with operating voltage constraints in advanced SiGe HBTs;2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.
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