Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's-Reference-Cited by-同舟云学术

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Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

Published:1999-05 Issue:5 Volume:46 Page:1007-1015
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Niu G.,Cressler J.D.,Zhang S.,Gogineni U.,Ahlgren D.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/16454/00760410.pdf?arnumber=760410

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HBT Modeling and X-Band Differential LNA Design with 0.25 µm SiGe-C BiCMOS Process;2023 22nd Mediterranean Microwave Symposium (MMS);2023-10-30

2. Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05

3. On the Modeling of the Avalanche Multiplication Coefficient in SiGe HBTs;IEEE Transactions on Electron Devices;2019-06

4. (Invited) Physics and Compact Modeling of SiGe HBT Linearity Using Mextram;ECS Transactions;2018-07-20

5. Investigation of Time-Domain Locus of SiGe HBTs in the Avalanche Region by Using the X-Parameter Measurement Under Large-Signal Drive;IEEE Microwave and Wireless Components Letters;2017-05

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