A comparative study of EL2 and other deep centers in undoped SI GaAs using optical absorption spectra and photoconductivity measurements-Reference-Cited by-同舟云学术

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A comparative study of EL2 and other deep centers in undoped SI GaAs using optical absorption spectra and photoconductivity measurements

Published:2003-10 Issue:1-2 Volume:512 Page:1-7
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Kozlova J.P.,Bowles T.J.,Eremin V.K.,Gavrin V.N.,Koshelev O.G.,Markov A.V.,Morozova V.A.,Polyakov A.J.,Verbitskaya E.M.,Veretenkin E.P.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. A study of the trap influence on the performance of semi-insulating GaAs detectors

2. Analysis of trapping and detrapping in semi-insulating GaAs detectors

3. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs

4. Study of GaAs as a material for solar neutrino detectors

5. Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-Wafers

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1. Excess noise and deep levels in GaAs detectors of nuclear particles and ionizing radiation;Journal of Communications Technology and Electronics;2015-06

2. Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant;Crystal Growth Technology;2010-07-19

3. Boron- and stoichiometry-related defect engineering during B2O3-free GaAs crystal growth;physica status solidi (c);2009-12

4. Impurity photovoltaic effect in p-i-n structures of undoped GaAs;Moscow University Physics Bulletin;2009-04

5. Defect distribution in boron-reduced GaAs crystals grown by vapour-pressure-controlled Czochralski technique;Journal of Crystal Growth;2008-04

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