Defect distribution in boron-reduced GaAs crystals grown by vapour-pressure-controlled Czochralski technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference39 articles.
1. Crystal Growth Technology;Rudolph,2003
2. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs
3. A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide
4. A comparative study of EL2 and other deep centers in undoped SI GaAs using optical absorption spectra and photoconductivity measurements
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