Direct observation and measurements of neutron-induced deep levels responsible for Neff changes in high-resistivity silicon detectors using TCT
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. The use of the signal current pulse shape to study the internal electric field profile and trapping effects in neutron damaged silicon detectors
2. Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors
3. Determination of the Fermi level position for neutron irradiated high resistivity silicon detectors and materials using the transient charge technique (TChT)
4. Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors
5. Carrier drift mobility study in neutron irradiated high purity silicon
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