Measurement of proton-induced radiation damage effects in double-sided silicon microstrip detectors

Author:

Brandl A.,Seidel S.,Worm S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. SVX II upgrade proposal and simulation study;Bacchetta;CDF Collaboration Internal Note 1922,1993

2. Bulk radiation damage in silicon detectors and implications for SVX II;Matthews;CDF Collaboration Internal Note 3408,1995

3. Particle fluxes and damage to silicon in the ATLAS Inner Detector;Gorfine;ATLAS Internal Note INDET-No-030,1993

4. Specifications for SVX II double-metal microstrip detector prototypes;Seidel;CDF Collaboration Internal Note 2030,1993

5. R. Yarema et al., A beginner's guide to the SVX2, FERMILAB-TM-1892.

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Capacitance of silicon pixels;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-03

2. CDF Run II silicon tracking projects;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2000-06

3. Characterisation and simulation of a single-sided, n+ on n silicon microstrip detector before and after neutron irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-06

4. Radiation effects in double-sided silicon sensors for CDF;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1998-11

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