Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry-Reference-Cited by-同舟云学术

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Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry

Published:1989-02 Issue:1-3 Volume:2 Page:131-137
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Fried M.,Lohner T.,De Nijs J.M.M.,Van Silfhout A.,Hanekamp L.J.,Khanh N.Q.,Laczik Z.,Gyulai J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

2. CMOS on buried nitride—A VLSI SOI technology

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ spectroscopic ellipsometry in vertical furnace: monitoring and control of high-temperature processes;Vacuum;2001-05

2. ELLIPSOMETRIC CHARACTERIZATION OF THIN FILMS;Handbook of Surfaces and Interfaces of Materials;2001

3. Chapter 1 Ellipsometric Analysis;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997

4. Analysis of lossy optical materials possessing graded refractive index profiles;Optical Engineering;1994-09-01

5. Infrared and Ultraviolet Analysis of Dual-Ion Implanted Gaas;MRS Proceedings;1993

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