Silicon thin films obtained by rapid thermal atmospheric pressure chemical vapour deposition-Reference-Cited by-同舟云学术

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Silicon thin films obtained by rapid thermal atmospheric pressure chemical vapour deposition

Published:1996-05 Issue:1 Volume:39 Page:48-51
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Monna R.,Slaoui A.,Lachiq A.,Muller J.C.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Physics of Semiconductor Devices;Sze,1981

3. Proc. 9th IEEE Photovoltaic Specialist Conf. IEEE;Mandelkorn,1972

4. Proc. 15th IEEE Conf. PV Specialists;Goetzberger,1981

5. Proc. 14th IEEE Conf. PV Specialists;Wolf,1980

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1. A transport-kinetic model development for polysilicon chemical vapor deposition in a SiHCl3–H2 system;International Journal of Thermal Sciences;2024-05

2. Doped Polycrystalline Silicon Thin Films Deposited on Glass from Trichlorosilane**;Chemical Vapor Deposition;2015-01-02

3. Epitaxial thin-film Si solar cells;Thin Solid Films;2006-07

4. High-Growth-Rate Chemical Vapor Deposition of Silicon: an Experimental and Modeling Approach;Zeitschrift für Physikalische Chemie;2005-05-01

5. Electron paramagnetic resonance study of defects in rapid thermal chemical vapor deposited polycrystalline silicon;Materials Science and Engineering: B;2000-01

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