Modeling of boron diffusion in polysilicon-on-silicon structures using a rapid thermal anneal step for ultra-shallow junction formation
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Study of a WSi2/polycrystalline silicon/monocrystalline silicon structure for a complementary metal‐oxide‐semiconductor for a compatible self‐aligned bipolar transistor emitter
2. The poly‐single crystalline silicon interface
3. A physically based phenomenological model using boltzmann-matano analysis for boron diffusion from polycrystalline Si into single crystal Si
4. Polycrystalline Silicon Emitter Contacts Formed by Rapid Thermal Annealing
5. Effect of epitaxial realignment on the leakage behavior of arsenic-implanted, as-deposited polycrystalline Si-on-single crystal Si diodes
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Large open-circuit voltage improvement by rapid thermal annealing of evaporated solid-phase-crystallized thin-film silicon solar cells on glass;Applied Physics Letters;2005-04-25
2. V/sub oc/ improvement of evaporated SPC thin-film Si solar cells on glass by rapid thermal annealing;Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.
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