Defect levels in n-silicon after high energy and high dose implantation of proton

Author:

Barbot J.F.,Blanchard C.,Ntsoenzok E.,Vernois J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Silicon Science and Technology as the Background of the Current and Future Knowledge Society;Advanced Silicon Materials for Photovoltaic Applications;2012-06-13

2. Studies of deep levels in He + -irradiated silicon;Applied Physics A: Materials Science & Processing;1997-10-01

3. The effect of particle fluence and flux in alpha-irradiated silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05

4. Capacitance-transient-spectroscopy model for defects with two charge states;Physical Review B;1997-04-15

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