Growth of thin β-SiC layers by carbonization of Si surfaces by rapid thermal processing
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Epitaxial Growth and Characterization of β ‐ SiC Thin Films
2. Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/
3. Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon
4. Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon
5. Suppression of etch pit and hillock formation on carbonization of Si substrate and low temperature growth of SiC
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1. Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing;Crystals;2020-06-18
2. Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111);Physics of the Solid State;2019-12
3. Reconstruction of concentration profiles in heterostructures with chemically modified interfaces;Journal of Applied Physics;2018-06-07
4. Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes;Applied Physics Letters;2017-02-20
5. Study on AlGaN/GaN growth on carbonized Si substrate;Japanese Journal of Applied Physics;2014-01-01
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