Surface barrier height in metal-n-6H-SiC structures-Reference-Cited by-同舟云学术

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Surface barrier height in metal-n-6H-SiC structures

Published:1995-01 Issue:1-3 Volume:29 Page:198-201
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Syrkin A.L.,Andreev A.N.,Lebedev A.A.,Rastegaeva M.G.,Chelnokov V.E.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Luminescence of Donor-Acceptor Pairs in Cubic SiC

3. Exciton Recombination Radiation and Phonon Spectrum of6HSiC

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Annealing on the Electrical Properties of Ti and Ni Contacts to 4H-SiC;Japanese Journal of Applied Physics;2012-08-01

2. Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Annealing on the Electrical Properties of Ti and Ni Contacts to 4H-SiC;Japanese Journal of Applied Physics;2012-07-30

3. Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing;Applied Physics Letters;2012-06-25

4. Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes;Microelectronic Engineering;2011-06

5. Characterization of Cr/6H-SiC(0001) nano-contacts by current-sensing AFM;Applied Surface Science;2009-11

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