Erbium-doped silicon and porous silicon for optoelectronics-Reference-Cited by-同舟云学术

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Erbium-doped silicon and porous silicon for optoelectronics

Published:1996-09 Issue:2-3 Volume:40 Page:207-215
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Reed G.T.,Kewell A.K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference68 articles.

1. Integrated Optics: Theory and Technology;Hunsperger,1991

2. Low-loss planar optical waveguides fabricated in SIMOX material

3. SPIE Proc., 2071, Distributed and Multiplexed Fibre Optic Sensors III;Rickman,1993

4. Optical waveguides in SIMOX structures

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1. Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission;Scientific Reports;2017-07-20

2. Non-rigid alignment in electron tomography in materials science;Journal of Microscopy;2016-03-28

3. Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits;Journal of Semiconductors;2015-12

4. Electrochemical doping of mesoporous silicon with Er: the effect of the current intensity;Applied Surface Science;2014-08

5. Controlling the Er content of porous silicon using the doping current intensity;Nanoscale Research Letters;2014-07-04

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