Synchrotron topography characterization of ZnTe single crystals-Reference-Cited by-同舟云学术

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Synchrotron topography characterization of ZnTe single crystals

Published:1994-11 Issue:2-3 Volume:27 Page:143-153
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Zhou W.,Dudley M.,Wu J.,Su C.H.,Volz M.P.,Gillies D.C.,Szofran F.R.,Lehoczky S.L.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Growth and Optical Properties of Wide-Gap II–VI, Low-Dimensional Semiconductors;McGill,1988

2. Dislocation density variations in HgCdTe films grown by dipping liquid phase epitaxy: Effects on metal–insulator–semiconductor properties

3. Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors

4. The formation of twins in 〈111〉 HgCdTe grown by travelling heater method and their effect on device quality

5. Materials growth and its impact on devices from wide band gap II–VI compounds

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1. Characterizations on Crystalline Structures and Defect Distributions;Vapor Crystal Growth and Characterization;2020

2. Investigation of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection;Journal of Electronic Materials;2010-01-07

3. Effect of constrained growth on defect structures in microgravity grown CdZnTe boules;Journal of Electronic Materials;1998-06

4. Characterization of Zn-alloyed CdTe compound semiconductors processed in microgravity on USML-1 and USML-2;Advances in Space Research;1998-01

5. Characterization of cadmium-zinc telluride crystals grown by ‘contactless’ PVT using synchrotron white beam topography;Journal of Crystal Growth;1997-12

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